Abstract
Conventional semiconductor equations do not accurately describe carrier transport phenomena particularly in submicrometer semiconductor devices because of the use of the local field-dependent mobility. In this work, a hot-carrier transport model is used in the numerical simulation of submicrometer silicon bipolar junction transistors (BJT's). The hot-carrier effect, velocity overshoot, is predicted in this model and the results compare favorably with those obtained by the Monte Carlo method, which consumes much more computer time. A heuristic iterative procedure has been developed that proves to be very efficient in solving the five coupled nonlinear semiconductor equations including the energy balance equations.
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