Abstract
Antimony sulfo-selenide, Sb2(S-Se)3including Sb2S3 and Sb2Se3 are known as the binary type metal chalcogenides semiconductors. They carry abundant elemental storage which is nontoxic in nature, having good stability at elevated temperature and have acceptable physical specifications regarding light absorbance substances in photovoltaic devices. Exploiting from the earlier study related to thin film devices and from the recent nanostructured photovoltaics, the Sb2S3 and Sb2Se3is being considered as an absorber layer for hetero-junction type planer solar cells or in sensitized-architecture solar cells. To show a perspective of this sphere of study, this paper exhibits some distinctive studies of the physical parameters of the Sb2(S,Se)3 device. In this optimization process, Sb2Se3 and Sb2S3 used as a tandem structure in the conventional thin film solar cell structure. Different parameters like; thickness, radiative recombination, carrier concentration and series/shunt resistance of the device has been optimized using SCAPS-1D software sequentially. After the optimization of all the above discussed parameters, a reasonable power conversion efficiencies of 13.2% was achieved. With the optimized value, how to achieve a device with good PCE is discussed. Finally, this paper analyses a detail study about the performance of antimony sulphide-selenide based tandem solar cell device for photovoltaic applications.
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