Abstract
The present study is concerned with the use of ZnMgO alloys as a potential replacement of the toxic CdS compound for the buffer layer in a ZnO/ZnMgO/CZTS solar cell structure. Simulations on the effect of the thickness of each layer constituting the solar cell have been performed using SCAPS simulator. The optimal values of these thicknesses corresponding to the best conversion efficiency have been determined. The obtained results are found to be 0.02, 0.02, 0.02 and 2 μm for ZnO:Al, ZnO, ZnMgO, and CZTS, respectively and give a conversion yield of 21.86% which compare well with the previous findings quoted in literature. Furthermore, the effect of the band gap energy of CZTS has been addressed. The best performance of our cell corresponds to a CZTS band gap energy in the vicinity of 1.4 eV.
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