Abstract
This paper investigates the non-Fourier transient heat transfer in an SOI FinFET transistor. The calibrated drift-diffusion (D-D) model in conjunction with the ballistic diffusive (BDE) model is used as an electrothermal model to predict phonon and electron transports in the quasi-ballistic regime. The finite element method has been employed to generate the numerical results. The proposed mathematical formulation was found to capture the transfer characteristics and the temporal temperature as given by TCAD simulation and experimental data. On the other hand, we have demonstrated that after 100 ns, the 14 nm Bulk FinFET supports better temperature distribution than the 14 nm SOI FinFET.
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