Numerical investigation of nanoscale double‐gate junctionless MOSFET with drain and source extensions including interfacial defects

Abstract

AbstractThe use of uniformly doped channel, source and drain regions presents the well‐known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi‐gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I‐V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I‐V, analog and linearity characteristics are investigated by an appropriate 2‐D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)