Abstract
Longitudinal spatial hole burning (LSHB) and its effect on output power of broad-area semiconductor lasers are examined using one-dimensional rate equations. It is shown that direct LSHB can be separated into two mechanisms – an increase in the effective threshold current and a decrease in the output efficiency. The LSHB dependence on laser diode parameters is analysed. In particular, a large optical confinement factor Γ is shown to suppress the LSHB-induced power decrease.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
