Abstract
A quasi-3-D semiconductor laser model that takes into account both longitudinal and lateral spatial hole burning is presented and used to perform calculations of the longitudinal side-mode-suppression ratio, the lateral side-mode kink power, and the linewidth of devices with coupling up to kappa L=6. Detailed results on the effects of inhomogeneous injection, wavelength detuning, phase shift position, and optical losses on these quantities are discussed and used to draw conclusions on the regions of stable single-mode operation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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