Abstract
Annealing Ni/Ti multilayer thin films in order to achieve better composition control of theresultant NiTi shape memory thin films is proposed. To avoid furnace annealing, we numericallyinvestigate the feasibility of using a laser to heat the thin films. It is demonstrated that use of aCO2 laser can be an efficient approach for annealing Ni/Ti multilayer thin films. It is suggestedthat a Ti layer should be deposited first on a silicon substrate for better absorption of laserenergy and adhesion. As the high temperature area can be confined within the micronscale, it is fully compatible with the current IC/MEMS processing techniques.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
