Abstract
A numerical examination is carried out on a theoretical model of irradiated intrinsic semiconductors. Depending on the integration artifact employed to solve the model, there are ``solutions'' that lead to a peculiar transient consisting of an intermittent chaotic dynamics that breaks down into a cascade of reverse period-doubling bifurcations. As such oscillatory instabilities are detrimental to photodetector performance, separation of the dynamics of the model from that of the numerics is crucial for the reliable design of these devices. This work characterizes these chaotic time series within the context of the potentially chaotic iterative structure that emerges from the discretization of the model.
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