Abstract
Numerical simulations have been made by a finite difference technique on the behaviour of GaAs pin diodes with doping densities in the range of 10 21/m 3–10 25/m 3. The simulated I–V characteristics of these diodes show reasonable results for all doping densities, giving an ideality factor m≈1. The above results clearly manifest systematically the effect of series resistance arising from the different doping densities. The simulated results confirm the Two Roots Model. In addition some experimental results on GaAs Schottky diodes do conform with the model as well.
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