Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices

Abstract

We theoretically investigate influences of electronic circuit delay, noise, and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based device by means of the micromagnetic simulation. This device realizes magnetization switching via spin–orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA), which originate from the 2D-Dirac electronic structure. We reveal that the device operation is extremely robust against circuit delay and signal-to-noise ratio. We demonstrate that the WER on the order of ∼10−4 or below is achieved around room temperature due to steep change in VCMA. Also, we show that the larger SOT improves thermal stability factor. This study provides a next perspective for developing voltage-driven spintronic devices with ultra-low power consumption.