Abstract
AbstractA numerical scheme is developed to simulate the non‐isothermal steady‐state behaviour of a MOS field effect transistor. In a desire to develop a fast, stable numerical scheme, physical instabilities were eliminated by using a simplified device model. The numerical technique developed permits a computer solution of the majority carrier transport equation, the nonlinear heat conduction equation, in which the heat generation term is obtained from the solution of the transport equation, and a number of auxiliary differential equations.The simplified model of the MOS transistor adopted will not, of course, produce any information on the actual operation of the short channel MOS transistor of practical interest today, but the numerical scheme can be extended to simulate short channel models that are of great practical interest.
Published Version
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