Abstract
The numerical analysis results and theoretical limit of specific on-resistance (RON·A) for a parallel trench gate superjunction (SJ) MOSFET where a striped trench gate structure is parallel to a striped SJ structure and a perpendicular trench gate SJ-MOSFET where the striped trench gate structure is perpendicular to the striped SJ structure are presented. Analytical equations for relationships between breakdown voltage and RON·A are verified by device simulation and show good agreement with simulation results. When the MOSFET cell pitch is below half of the SJ pitch, in accordance with the numerical analysis results, the RON·A of the perpendicular SJ-MOSFET is smaller than that of the parallel SJ-MOSFET. This is due to the fact that the drift resistance including a current spreading effect and the channel resistance including a current narrowing effect in the perpendicular SJ-MOSFET are reduced by reducing the MOSFET cell pitch.
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