Abstract
AbstractThe Poisson equation, current‐continuity equations and rate equations for charged traps were solved numerically to analyze the flat‐band voltage shift due to irradiation for MOS capacitors. Good agreement was obtained between computed and previously reported flat‐band voltage shift dependence on gate voltage during irradiation, accumulated dose and oxide thickness. The physical meaning of the flat‐band voltage shift was clarified for the distributions of calculated charged traps and electrostatic potential. Moreover, the influence of electron hole mobilities, and trap density on the flat‐band voltage shift is discussed.
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