Abstract
Improving the photon–spin conversion efficiency without polarization dependence is a major challenge in realizing quantum interfaces gate-defined quantum dots (QDs) for polarization-encoded photonic quantum network systems. Previously, we reported the design of an air-bridge bull’s-eye cavity that enhances the photon absorption efficiency of an embedded gate-defined QD regardless of the photon polarization. Here, we numerically demonstrate that a further 1.6 times improvement in efficiency is possible by simply adjusting the distance of the substrate from the semiconductor slab where the bull’s-eye structure is formed. Our analysis clarifies that the upward-preferred coupling and narrow far-field emission pattern realized by substrate-induced asymmetry enable the improvement.
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