Abstract
Indirect phonon-assisted Auger recombination mechanisms in bulk InGaN are investigated in the framework of perturbation theory, using first-principles phonon spectral density functions and electronic structures obtained by nonlocal empirical pseudopotential calculations. Nonpolar carrier-phonon interactions are treated within the rigid pseudoion framework, thus avoiding the introduction of empirical deformation potentials. The calculated indirect Auger coefficients exhibit a weak temperature dependence and dominate over direct processes for alloy compositions corresponding to the entire visible spectrum. The present results suggest that indirect Auger processes may be relevant in the operation of InGaN-based light-emitting diodes and lasers, at least in the yellow-green spectral region.
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