Abstract
We investigated the influence of cooling rate on dislocation density in multicrystalline silicon using the unidirectional solidification process for solar cells. The results showed that the maximum value of dislocation density is decreased and that of residual stress is increased in a fast cooling process. These phenomena are attributed to the difference in dwell time at an elevated temperature for multiplication of dislocations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
