Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors

Abstract

Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. The ambipolar behavior of Schottky barrier CNTFETs limits the performance of these devices. A double gate design is proposed to suppress this behavior. In this structure the first gate located near the source contact controls carrier injection and the second gate located near the drain contact suppresses parasitic carrier injection. To avoid the ambipolar behavior it is necessary that the voltage of the second gate is higher or at least equal to the drain voltage. The behavior of these devices has been studied by solving the coupled Schrodinger-Poisson equation system. We investigated the effect of the second gate voltage on the performance of the device and finally the advantages and disadvantages of these options are discussed.