Abstract
The first vertical-cavity surface-emitting laser diodes operating continuous-wave at room temperature at 1.54 μm emission wavelength are analyzed using a comprehensive numerical simulation procedure. These lasers employ strain-compensated InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs mirrors that are double-fused on the InP spacer layers at both sides. The model includes finite element electro-thermal simulation, transfer-matrix optical analysis, and k⋅p band structure calculations. Internal laser parameters are obtained by fitting experimental data at different heat sink temperatures. Intervalence band absorption is found to be the dominating loss mechanism that restricts cw operation.
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