Abstract
The performance parameters of molybdenum disulfide (MoS2) solar cell with antimony trisulfide (Sb2S3) hole transport layer (HTL) have been studied by One Dimension Solar Capacitance Simulator software program (SCAPS-1D). The detailed numerical analysis of the influence of band alignment, defect density, absorber layer thickness, electron affinity of HTL on open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF) and efficiency (ɳ) have been investigated. The impact of interface defect density at Sb2S3/MoS2 and CdS/MoS2 has also been analyzed. The insertion of Sb2S3 HTL into the newly designed hetero-structure (Al/FTO/CdS/MoS2/Sb2S3/Ni) solar cell enhances Voc, and ɳ by creating appropriate band alignment as well as reducing recombination loss at rear surface. The effects of surface recombination velocity, shunt and series resistance, temperature on photovoltaic efficiency parameters have also been investigated. The determined value of ɳ is 27.96% along with Voc of 0.92 V, Jsc of 35.20 mA/cm2 and FF of 85.51% at 1.0 μm optimized thickness of MoS2 with doping density 1 × 1015 cm−2. These results may provide an insightful approach to fabricate low cost and superior performance solar cells with the Sb2S3 HTL layer.
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