Abstract
Abstract Diamond was grown on boron nitride thin films deposited on silicon substrates. The effects of substrate biasing on the nucleation and growth of diamond were studied. Boron nitride (BN) films were obtained by rf plasma CVD. FT-IR analysis of the BN films revealed a hexagonal structure and a high transparency. The diamond deposition process was carried out in a bias-assisted hot filament reactor. Both positive and negative biases relative to the filament were applied to BN-coated Si substrates. The density and morphology of the diamond crystallites in the early stages of the nucleation were studied by scanning electron microscopy. We found that negative substrate biases higher than 200 V greatly increased the nucleation density of diamond, reaching a maximum of 1010 cm−2 for −250 V. After the nucleation stage, continuous diamond films were grown under standard deposition conditions and Raman analysis revealed the high quality of the diamond films.
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