Abstract
He + ions were implanted into (1 0 0) Si at energies from 30 to 120 keV and fluences from 5 × 10 15to 1 × 10 16cm −2. After implantation, pieces of these samples were subjected to rapid thermal annealing for 600 s at temperatures ranging from 300°C to 700°C. The samples were analyzed by Transmission Electron Microscopy (TEM) and by Rutherford Backscattering and channeling spectrometry (RBS/C). The TEM observations were related to the RBS/C measurements and the results discussed in terms of a nucleation model to explain the formation of overpressurized bubbles in He implanted and annealed silicon.
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