Abstract
Structural changes and phase transitions during 10 17–10 18 ions/cm 2 silicon ion implantation (at 100 keV) into nickel and subsequent annealing have been studied. Single crystal Ni samples were examined by Rutherford backscattering spectrometry and channeling (RBS-C) and reflection high energy electron diffraction (RHEED). Polycrystalline samples were thinned after ion implantation for TEM (transmission electron microscope) observations which included in situ annealing at temperatures up to 800°C. The structural changes were found to be critically dependent on the Si concentration which builds up with increasing implantation dose. Partial amorphization occured at intermediate doses higher than 1 × 10 17 ions/cm 2 and a complete amorphous layer formed at a nominal dose of 4.5 × 10 17 ions/cm 2 or above. The in situ annealing of selected prethinned specimens revealed a variety of nickel silicide phases depending on annealing conditions. This behaviour is discussed in terms of the availability of Ni supply during the annealing.
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