Abstract
Damage profiles and the associated annealing behavior in Al 0.168Ga 0.348In 0.484P/GaAs samples implanted with 200 keV Zn + ions were investigated by using Rutherford backscattering spectrometry and channeling (RBS/C) technique. A computer code was used to extract quantitative damage profiles from the RBS/C spectra. The measured damage profiles are compared with those obtained from TRIM98 computer simulation code, and a good agreement between the measurements and the TRIM98 simulations was observed. The annealing behavior of the damage induced in the AlGaInP/GaAs samples was studied and compared with that induced in GaP bulk crystal substrates under the same implantation and annealing conditions. The result shows that the structure of the radiation damage induced in the quaternary III–V compound, AlGaInP, is more complicated than that in the binary III–V compound, GaP.
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