Abstract
Low pressure chemical vapor deposition of copper from copper(II) hexafluoroacetylacetonate [Cu(hfa) 2] on different thicknesses of pre-deposited gold on a silicon substrate has been studied to determine the initial deposition mechanisms of nucleation and growth. The surface morphology changes of pre-deposited 30 Å thick gold films were observed during heat treatment under hydrogen; fine, uniform close packed gold particle changed into agglomerated island formations on the surface leading to dinscontinuities covering only 20% of the overall Si surface as a result of surface diffusion. Pure metallic copper films were obtained on the agglomerated substrate. When pre-deposited 1500 Å thick gold film was used as a substrate, the deposited film on the gold substrate was not a pure copper but consisted of a CuAu compound at the interface as a result of strong interdiffusion from the gold and copper atomic interaction. Thermally-induced interdiffusion may thus change the film properties and the microstructure of the deposited film under the experimental conditions.
Published Version
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