Nucleation and evaporation of new domains under the influence of successive electric field in Al-doped KNbO3 single crystal

Abstract

Photographic proof of domain wall nucleation was originated on the surface of Al-doped KNbO3 single crystal. For the photographic proof, experiment were performed using a trinocular microscopy technique. Nucleation and evaporation of 60° and 90° domain were conducted under the applied electric field at room temperature which is consistent to the elastic theory of dislocation. An attempt was made by the dislocation model to clarify that the nucleation and evaporation of the domain walls was dependent on impurity dipoles. The appearance of nucleation and evaporation of domains under the influence of electric fields was interestingly studied in domain engineering.