Abstract
The use of elastic resonance backscattering of protons in the analysis of thin films is sometimes an advantage. It allows precise and accurate thickness determination even when the energy calibration of the system is marginal. The availability of reliable values for the scattering cross section in the region of the resonance is essential. We have remeasured the elastic scattering cross section of protons on C and Si in the energy region between 450 and 2200 keV at a laboratory angle of 155°. Our data are compared with earlier measurements. The usefulness of the incorporation of resonance scattering in the spectrum analysis is demonstrated.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
