Abstract
In this contribution, near field scanning optical microscope (NSOM) lithography is presented as a tool for organized growth of nanowires. Non contact mode of NSOM lithography was used to pattern planar structures in photoresist deposited on GaP substrate. In combination with lift-off technique, metal-catalyst particles on GaP substrate for subsequent growth of GaP nanowires were prepared. Different periodic and predefined arrangements of GaP nanowires were achieved.
Highlights
Preparation of semiconductor nanowires (NWs) has been studied intensively due to their unique structural and physical properties that offer big potential for technological applications
We demonstrate near field scanning optical microscope (NSOM) lithography as a tool for organized growth of nanowires
Due to the nearly Gaussian shape of the exposing optical field irradiated from the fiber probe, air hole edges are oblique, which is in good agreement with published results on NSOM lithography [10]
Summary
Preparation of semiconductor nanowires (NWs) has been studied intensively due to their unique structural and physical properties that offer big potential for technological applications. Metal particles with diameter below 100 nm are deposited on the substrate surface Such substrate is heated in reaction chamber until particles melt and form liquid droplets. The semiconductor material is dissolved and forms an alloy which has lower melting point in comparison with pure metal In this phase, a gas containing growth material flows through the reaction chamber and incorporation of precursor atoms into the alloy leads to supersaturation of semiconductor component. A gas containing growth material flows through the reaction chamber and incorporation of precursor atoms into the alloy leads to supersaturation of semiconductor component It precipitates at solid-liquid interface which starts growth of NW with diameter determined by size of the droplet [2]
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