Abstract
We have developed a variable-shaped electron beam (EB) lithography system which we call NOWEL-2. The system has the following features: (1) a short objective lens and a four-stage major deflection system; the landing angle at the corner of the 1.6 mm square major field is less than 2 mrad, and patterns from 0.1 to 3.0 µm are well resolved over the whole deflection field, (2) 20-bit digital-to-analog converter and high-precision current output amplifier, in which the least significant bit (LSB) corresponds to 0.0025 µm; linearity error is less than 1/4 LSB at 23±5°C, (3) refocusing and refocus-flyback; the edge sharpness of a 3 µm square beam was improved from 0.5 µm to 0.25 µm, (4) eddy current compensation; for a 100 µm electromagnetic jump, the waiting time is less than 50 µs, (5) continuously moving stage mode exposure; beam position accuracy is about 0.05 µm (3σ).
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