Abstract
This paper reports on the study of limitations of variable shaped electron beam lithography (EBL) as flexible high-resolution pattern generators for the fabrication of high quality photomasks required for many applications in sensors and microsystems development, including packaging applications. For this purpose, the case of 50×50 nm2 electron beam shape at 40 keV electron energy and a high-resolution e-beam resist Hydrogen Silsesquioxane (HSQ) were utilized. Various process parameters, which determine the accuracy of the resist profiles and the size of structures, such as solubility rates, dependences of the linewidth on the exposure dose, lithographic resolution, etching capabilities of HSQ and their influence on the limitations of variable shaped EBL, are studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
