Abstract
Monolithic W-band push-pull power amplifiers have been developed using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power HEMT technology. The novel design approach utilizes a push-pull topology to take advantage of a virtual ground between the device pair, eliminating the series feedback of the via hole inductance, and thus improving the performance of the power amplifier at millimeter-wave frequencies. For a two-stage design presented in this paper, the measurement results show a small signal gain of 13 dB and a saturated output power of 19.4 dBm at 90 GHz. The best power added efficiency of 13.3% has been achieved at an output power of 18.8 dBm under a lower bias condition. The gain and efficiency results represent state-of-the-art performance. These are the first reported monolithic push-pull amplifiers at millimeter-wave frequencies. >
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
