Abstract
We report the performance of a monolithic V-band power amplifier using 0.15-/spl mu/m double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT's. The amplifier using a 400-/spl mu/m device driving a 2/spl times/400-/spl mu/m device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data represent the highest reported combination of output power, power gain, and power-added efficiency reported for a V-band monolithic power amplifier. >
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