Abstract
This paper presents a gate all around (GAA) AlGaN/GaN HEMT (GAA-MIS-HEMT) with AlN as an interfacial passivation layer. Gate all around technique is used to improve the performance of device such as carrier concentration, electric field and current density at the interface of AlGaN & GaN. The enhanced control over the 2DEG due to gate all around structure helped in attaining superior performance. Al2O3 is used as a dielectric. The results of GAA-MIS-HEMT are compared with planar-MIS-HEMT, which shows that the GAA-MIS-HEMT provides better ON-state current, OFF-state current, transconductance, cutoff frequency (11 GHz) and ON-state to OFF-state current ratio (1011), ON-resistance (0.9Ω-cm2) and subthreshold slope (63 mV/dec). All the layers of proposed structure are dopingless.
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