Abstract
A novel silicon-on-insulator (SOI) polarization splitter-rotator is proposed based on mode-evolution tapers and a mode-sorting asymmetric Y-junction. The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will evolve into the TE0 mode in the wide output arm while the input TE0 mode excites the TE0 mode in the narrow arm. The numerical simulation results show that the mode conversion efficiency increases with the lengths of the tapers and the Y-junction for the output waveguide widths in a large range. This proposed device has < 0.4 dB insertion loss with > 12 dB extinction ratio in an ultra-broad wavelength range from 1350 nm to 1750 nm. With such a broad operating bandwidth, this device offers potential applications for polarization diversity operating across every communication bands. Fabrication tolerance analysis is also performed in terms of the device width variation, the slab height variation and the variation of the upper-cladding refractive index.
Highlights
The silicon-on-insulator (SOI) platform, recently developed for many photonic applications has several advantages over glass-based systems, including small device footprint, low-loss nanowire waveguides, high-speed optical modulators and mature CMOS-compatible fabrication process [1]
A novel silicon-on-insulator (SOI) polarization splitter-rotator is proposed based on mode-evolution tapers and a mode-sorting asymmetric Y-junction
The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will evolve into the TE0 mode in the wide output arm while the input TE0 mode excites the TE0 mode in the narrow arm
Summary
The silicon-on-insulator (SOI) platform, recently developed for many photonic applications has several advantages over glass-based systems, including small device footprint, low-loss nanowire waveguides, high-speed optical modulators and mature CMOS-compatible fabrication process [1]. These SOI devices suffer from strong structural birefringence in waveguides due to the high index-contrast between silicon and SiO2, leading to a polarization-sensitive performance [2]. A linearly tapered DC has been implemented to relax the requirements on these device sizes, the coupling efficiency is significantly decreased [8] Another fabrication-tolerant MMI-based PSR with a large bandwidth has been reported recently [12], but this device has complex structures, including a mode-evolution taper, a Yjunction, a phase shifter and a MMI. The performance degradation caused by the imperfect fabrication is analyzed, showing that our device has a large fabrication tolerance
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