Abstract
Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal dichalcogenides. We discuss the symmetry of the induced SOIs and differences between TMD underlayers in the capacity of inducing strong SOIs in graphene. The strong SOIs contribute to bring novel phenomena to graphene, exemplified by robust supercurrents sustained even under tesla-range magnetic fields.
Highlights
Since the first experimental demonstration in 2004 [1], graphene has been one of the most intriguing materials in condensed matter physics
Due to exposed 2D electrons, electronic transport in graphene is highly affected by the nature of the substrate, as epitomized by the ultrahigh mobility graphene encapsulated in hexagonal boronnitride [11, 12]
We demonstrate generation of strong spin-orbit Interaction (SOI) in graphene by transition-metal dichalcogenides (TMDs) and present novel transport phenomena observed in the hybrid TMD/graphene system, using normal metal contacts and superconducting contacts
Summary
Since the first experimental demonstration in 2004 [1], graphene has been one of the most intriguing materials in condensed matter physics. To maintain the advantageous transport properties in graphene, it can be considered to deposit graphene on top of a substrate with strong SOIs. As mentioned above, due to exposed 2D electrons, electronic transport in graphene is highly affected by the nature of the substrate, as epitomized by the ultrahigh mobility graphene encapsulated in hexagonal boronnitride (hBN) [11, 12]. In the monolayer form, the bottom of the conduction bands and the top of the valence bands are located at inequivalent K and K valleys, similar to graphene, but a relatively large gap between 1 and 2 eV separates these bands These TMDs are semiconductors and much more resistive than graphene. We demonstrate generation of strong SOIs in graphene by TMDs and present novel transport phenomena observed in the hybrid TMD/graphene system, using normal metal contacts and superconducting contacts. We summarize the novel properties of graphene/TMD heterostructures and provide future prospects for this hybrid system as a platform to pursue more exotic effects created by strong SOIs
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