Abstract
In order to enhance the spin orbit interaction (SOI) in graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele-type SOI and high mobility samples are desired. However, the common external modification of graphene often introduces “extrinsic” Rashba-type SOI, which will destroy the possible topological state, bring a certain degree of impurity scattering and reduce the sample mobility. Here we show that by the EDTA-Dy molecule dressing, the carrier mobility is even improved, and the quantum Hall plateaus are observed more clearly. The Kane-Mele type SOI is mimicked after dressing, which is evidenced by the suppressed weak localization at equal carrier densities and simultaneous Elliot-Yafet spin relaxation. This is attributed to the spin-flexural phonon coupling induced by the enhanced graphene ripples, as revealed by the in-plane magnetotransport measurement.
Highlights
We show that by the EDTA-Dy molecule dressing, the carrier mobility is even improved, and the quantum Hall plateaus are observed more clearly
4) (Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China) 5) (Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China)
Summary
图 1 EDTA-Dy 修饰的石墨烯器件及其输运特性 (a) 石墨烯介观输运结构图, 用橘色小球代表 EDTA-Dy 分子修饰在石墨烯 上面; (b) EDTA-Dy 分子修饰的石墨烯的拉曼光谱; (c) 在 2, 20 和 290 K 温度下, EDTA-Dy 修饰石墨烯的电阻随门电压的变化; (d) 在温度 2 K 和磁场 12 T 的条件下, 分子修饰后的石墨烯的纵向电阻 ρxx 和霍尔电导 σxy 随门电压的变化.
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