Novel TiO2-based memristors FET with programmable SET/RESET for neuromorphic computing

Abstract

TiOx switching oxide-based gated memristor FET is fabricated using a sputtering and lift-off process. 3 µm wide source-drain electrode covered by ∼ 15 nm TiOx layer. Field emission scanning electron micrograph confirms the FET structure. 6.1 V forming voltage is essential to initiate the switching process. The positive and negative gate voltage effect on the set and reset process was confirmed. The gate-controlled memristor device can open another option for the synaptic process.