Abstract

Novel temporary bonding/debonding system including high heat resistant temporary bonding adhesive and debonding methods with conventional laser ablation or newly developed photonic release by Xe flash light irradiation will be introduced. Our new temporary bonding adhesive shows no delamination and no voiding after thermal treatment over 300 ℃ and can be easily removed by peeling off after debonding from the support carrier. In addition, by adopting the dual layer structure with adhesive layer and laser release layer, we can form the suitable structure for debonding with laser ablation. Furthermore, in the case that metal layer is applied instead of laser release layer, debonding by one-shot Xe flash light irradiation within 5 ms can be achieved, indicating the increased throughput at debonding process as compared to the other dobonding methods. Process demonstration results of wafer thinning down to 50 μm, fan-out wafer level packaging (FOWLP) will also be shown in this paper.

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