Abstract
In this paper, a novel 10W substrate integrated waveguide (SIW) high power amplifier (HPA) designed with SIW matching network (MN) is presented. The SIW MN is connected with microstrip line using microstrip-to-SIW transition. An inductive metallized post in SIW is employed to realize impedance matching. At the fundamental frequency of 2.14 GHz, the impedance matching is realized by moving the position of the inductive metallized post in the SIW. Both the input and output MNs are designed with the proposed SIW-based MN concept. One SIW-based 10W HPA using GaN HEMT at 2.14 GHz is designed, fabricated, and measured. The proposed SIW-based HPA can be easily connected with any microstrip circuit with microstrip-to-SIW transition. Measured results show that the maximum power added efficiency (PAE) is 65.9 % with 39.8 dBm output power and the maximum gain is 20.1 dB with 30.9 dBm output power at 2.18 GHz. The size of the proposed SIW-based HPA is comparable with other microstrip-based PAs designed at the operating frequency.
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