Abstract
In this paper, a novel half mode substrate integrated waveguide (HMSIW) 10W power amplifier (PA) designed with HMSIW matching network (MN) is presented for the first time. The HMSIW-based matching network (MN) is designed with microstrip-to-HMSIW transition and an inductive metalized post in HMSIW. The impedance matching for the fundamental frequency 2.14 GHz is realized by moving the position of the inductive metalized post in the HMSIW. Both the input and output MNs are designed with the proposed HMSIW-based MN concept. One HMSIW-based 10W PA using GaN HEMT at 2.14 GHz is designed, fabricated, and measured. The proposed HMSIW-based PA can be easily connected with any microstrip or SIW-based circuit. Measured results show that the maximum power added efficiency (PAE) is 72.2 % with 40.7 dBm output power and the maximum gain is 20.1 dB. At the design frequency of 2.14 GHz, the size of the proposed HMSIW-based PA is comparable with other microstrip-based PAs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
