Abstract
In this article, a novel strained superjunction vertical single diffused MOSFET is proposed with enhanced current driving capability. In this design strain is induced by using SiGe layer in a superjunction vertical single diffused MOSFET (SJ-VSDMOS) and it improves the device performance. The structure is simulated in Silvaco 2-D device simulator. Proposed device exhibits 30% increase in current driving capability, 6.8% less gate charge is required by the device with improved peak transconductance on comparing with conventional device. Area specific on resistance of the proposed device is reduced by 24%. Hence, proposed device exhibits enhanced electrical behavior compared to conventional device.
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