Abstract
In this paper, we present a description of a novel high-rate plasma sputtering system that allows the control of grain size in sputtered films. Additionally, the system has the advantage of a better utilization of the target material (around 80% to 90%) by eliminating the race track at the target as in conventional plasma magnetron sputtering systems. The potential and capabilities of this novel plasma sputtering device are demonstrated in this paper by the deposition of a number of different Cr thin films suitable for underlayers in thin-film media and for which we have performed a systematic X-ray and TEM analysis to determine the grain-size histograms, mean grain diameters, and their relationship to the sputtering processes.
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