Abstract
A novel silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) is proposed and investigated in this work. The device features a single-step buried oxide (SSBO) structure formed on the silicon-on-insulator (SOI) layer. The SSBO structure introduces a high electric field peak by the electric field modulation to modulate electric field distributions. Therefore, the proposed SOI LIGBT can maintain the high breakdown voltage (BV) while shortening the length of drift region, which achieves the decreased total number of stored carriers during the turn-on and fast depletion of drift region during the turn-off. As the simulation results show, under the same BV of 98 V, the drift region length of the proposed SOI LIGBT is 4.4 μm, which is much shorter than that of the conventional SOI LIGBT of 12.0 μm. So the turn-off time of SSBO SOI LIGBT is 76.6% lower than that of the conventional SOI LIGBT at the same forward voltage drop of 1.72 V. It shows that the tradeoff between forward voltage drop and turn-off time can be significantly improved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
