Novel fast-switching LIGBT with P-buried layer and partial SOI* *Project supported by the National Basic Research Program of China (Grant No. 2015CB351906) and the Science Foundation for Distinguished Young Scholars of Shaanxi Province, China (Grant No. 2018JC-017).

Abstract

A novel silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) is proposed in this paper. The proposed device has a P-type buried layer and a partial-SOI layer, which is called the BPSOI-LIGBT. Due to the electric field modulation effect generated by the P-type buried layer and the partial-SOI layer, the proposed structure generates two new peaks in the surface electric field distribution, which can achieve a smaller device size with a higher breakdown voltage. The smaller size of the device is beneficial to the fast switching. The simulation shows that under the same size, the breakdown voltage of the BPSOI LIGBT is 26% higher than that of the conventional partial-SOI LIGBT (PSOI LIGBT), and 84% higher than the traditional SOI LIGBT. When the forward voltage drop is 2.05 V, the turn-off time of the BPSOI LIGBT is 71% shorter than that of the traditional SOI LIGBT. Therefore, the proposed BPSOI LIGBT has a better forward voltage drop and turn-off time trade-off than the traditional SOI LIGBT. In addition, the BPSOI LIGBT effectively relieves the self-heating effect of the traditional SOI LIGBT.