Abstract

A novel concept to develop far-infrared (FIR) Si detectors is proposed based on homojunction internal photoemission. As the first approach, a 48 micrometers (lambda) <SUB>c</SUB> Si FIR detector is demonstrated on molecular beam epitaxy grown homojunction multilayers consisting of highly doped emitter layers and undoped intrinsic layers. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 +/- 0.1 A/W at 27.5 micrometers and detectivity D* of 6.6 X 10<SUP>10</SUP> cmHz<SUP>1/2</SUP>/W at 4.2 K. The (lambda) <SUB>c</SUB> and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40 approximately 200 micrometers ) with high performance and tailorable (lambda) <SUB>c</SUB> can be realized using higher emitter layer doping concentrations.

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