Abstract

A novel 48 micrometers cutoff wavelength ((lambda) <SUB>c</SUB>) Si far-IR (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 +/- 0.1 A/W at 27.5 micrometers and detectivity D* of 6.6 X 10<SUP>10</SUP> cm (root) Hz/W at 4.2 K. The (lambda) <SUB>c</SUB> and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors with high performance and tailorable (lambda) <SUB>c</SUB>s can be realized using higher emitter layer doping concentrations.

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