Abstract
Novel methods of implementing direct coupled FET logic using GaAs-based pseudomorphic quasisquare quantum well HFETs have been identified from selfconsistent calculations of their charge control curves. The techniques are based on a new depletion-mode SISFET structure in which the n+ contact layer has a wider bandgap than the channel layer. Enhancement mode driver FETs are obtained by replacing the n+ contact with a Schottky barrier to create a HIGFET.
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