Abstract
A variety of Si detectors have been developed and processed at BNL with its unique detector fabrication facility. These detectors include Si drift detectors (SDD); Si micro- and mm-strip detectors; Si pad detectors; and Si pixel detectors with a variety of configurations. In this paper, the details of the design and processing technology of large area SDD for the STAR SVT at RHIC, micro- and mm-strip detectors for CERN RD39/NA60 experiments; and radiation tolerant n/n, n/p pixel detectors for LHC experiments will be given. In addition, simulation results of new types of Si strip/pixel detectors with improved radiation tolerance will be presented for the first time.
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