Si drift detector in comparison to Si(Li) detector for total reflection X-ray fluorescence analysis applications

Abstract

TXRF is routinely used and suited to inspect Si wafer surfaces for possible impurities of metallic elements at the level of pg and below. Lightweight, compact sized, high-resolution Silicon drift detectors (FWHM=148 eV at 5.9 keV) electically cooled and with high throughput are ideally as the new spectrometer and for clean room application. A KETEK 5 mm 2 Si drift detector was compared with a NORAN 80 mm 2 SiLi in a previously commercially available ATOMIKA 8010 wafer analyzer. Results are presented and show that almost the same detection limits for both detector types were achieved analyzing a droplet sample containing 1 ng Ni on a Si wafer. Also, the performance to detect low Z elements like Na, excited with monochromatic Cr Kα radiation in a vacuum chamber was tested and detection limits of 600 pg obtained.