Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

Abstract

A novel integration scheme of postgate single diffusion break (PG-SDB) has been proposed to enhance channel stress for Si gate-all-around (GAA) nanosheet field-effect transistors (NS-FET), based on TCAD simulations. Compared to conventional SDB and self-aligned SDB (SA-SDB), the proposed PG-SDB scheme implements SDB module after the replacement metal gate (RMG) process, so as to eliminate the stress relaxation to free surfaces. The channel stress has been boosted to +3.5 GPa/−4.7 GPa, for N/P NS-FETs, respectively. As a result, great drive capability as well as N/P current matching has been achieved in the PG-SDB GAA NS-FETs.